Power Mosfet IRF9910 SO-8
The Power Mosfet IRF9910 SO-8 It is an N-type conduction field effect transistor. This MOSFET is suitable for high current and high power applications, such as switching inductive loads. Its main specifications are:
Saturation voltage (Vth): 2.55V
Saturation resistance (Rds(on): 0.0134 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 20 V
Maximum operating temperature (Tj): 150°C
For more information, please consult the component datasheet on the manufacturer's official website.
Power Mosfet IRL2203N TO-220
Power Mosfet IRL2505PBF TO-220
Power Mosfet N-Channel IRL2203NS TO-263
The IRL2203NS TO-263 It is an N-type conduction field-effect MOSFET. Its main specifications are:
Saturation voltage (Vth): 2.5V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 116 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads.
For more information, please consult the component datasheet on the manufacturer's official website.
Power Mosfet RFP70N06 TO-220
Power Mosfet STS4NF100 SO-8
The Power Mosfet STS4NF100 SO-8 is a N-type conduction field effect transistor and has a lower collector current of 100A, this makes it more suitable for medium current applications. Its main specifications are:
Saturation voltage (Vth): 2.5V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 100 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C
For more information, please consult the component datasheet on the manufacturer's official website.
Power Mosfet TPC8125 SOIC-8
The Power Mosfet TPC8125 SOIC-8 is a P-type conduction field effect transistor (requires a negative voltage to be activated). This MOSFET is suitable for low voltage applications, such as signal amplification and switching. Its main specifications are:
Saturation voltage (Vth): -2.5V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C
For more information, please consult the component datasheet on the manufacturer's official website.
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