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Power Mosfet IRL2505PBF TO-220
Power Mosfet N-Channel IRL2203NS TO-263
The IRL2203NS TO-263 It is an N-type conducting field-effect MOSFET. Its main specifications are:
Saturation voltage (Vth): 2.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 116 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads.
For further information, please consult the component datasheet on the manufacturer's official website.
Power Mosfet RFP70N06 TO-220
Power Mosfet STS4NF100 SO-8
The STS4NF100 SO-8 Power MOSFET is an N-type conducting field-effect transistor with a lower collector current of 100A, making it more suitable for medium-current applications. Its main specifications are:
Saturation voltage (Vth): 2.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 100 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C
For further information, please consult the component datasheet on the manufacturer's official website.
Power Mosfet TPC8125 SOIC-8
The TPC8125 SOIC-8 Power MOSFET is a P-type conduction field-effect transistor (requires a negative voltage to activate). This MOSFET is suitable for low-voltage applications, such as signal amplification and switching. Its main specifications are:
Saturation voltage (Vth): -2.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C
For further information, please consult the component datasheet on the manufacturer's official website.
