English (UK) 
Italiano 
MOSFET BUK9540-100A TO-252
Login to see pricesThe BUK9540-100A TO-252 is a high-performance power MOSFET, suitable for applications where high current and high efficiency are required.
The specifications of BUK9540-100A TO-252 are as follows:
Type: N-channel MOSFET
Saturation voltage: 40V
Saturation current: 100A
Drain-source resistance: 0.006 ohms
Input capacity: 1.6 pF
Output capacity: 30 pF
Operating temperature: -55°C ~ +150°C
Package: TO-252
In addition, the BUK9540-100A TO-252 has the following features:
Switching gate-source voltage: 10V
Climbing time: 25 ns
Descent time: 25 ns
Gate resistance: 10 ohms
Gate capacity: 200 pF
MOSFET BUK9E06 TO-262
Login to see pricesThe BUK9E06 TO-262 It is an N-type conducting field-effect MOSFET.
Its main specifications are:
Saturation voltage (Vth): 2 V
Saturation resistance (Rds(on): 0.06 ohms
Collector current (Id): 75 A
Collector-emitter voltage (Vce): 55 V
Maximum operating temperature (Tj): 175°C
This MOSFET is suitable for high current applications, such as switching inductive loads.
For further information, please consult the component datasheet on the manufacturer's official website.
MOSFET IR2171S 8SOIC
Login to see pricesFunction: Current Sense
Voltage: Input 9.5V ~ 20V
Current: Output 1mA
Operating Temperature: -40C ~ 125C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC N
MOSFET IRF2804L TO-262
Login to see pricesThe IRF2804L TO-262 It is an N-type conducting field-effect MOSFET.
Its main specifications are:
Saturation voltage (Vth): 2.5 – 3 V
Saturation resistance (Rds(on): 0.1 ohm
Collector current (Id): 82 A
Collector-emitter voltage (Vce): 75 V
Maximum operating temperature (Tj): 175°C
This MOSFET is suitable for high current applications, such as switching inductive loads.
For further information, please consult the component datasheet on the manufacturer's official website.
MOSFET IRF3710STRL TO-252
Login to see pricesThe IRF3710STRL TO-252 It is a high-performance power MOSFET, suitable for applications where high current and high efficiency are required.
The specifications of the IRF3710STRL TO-252 are as follows:
Type: N-channel MOSFET
Threshold voltage: 2.5V
Continuous drain current: 100A
Power Mosfet FDS8858CZ SO-8
Login to see pricesThe Power MOSFET FDS8858CZ SO-8 It's a dual MOSFET, meaning it has two channels, one N and one P. This makes it suitable for applications requiring the switching of two independent loads. For example, it can be used to control two motors or two LEDs.
Its main specifications are:
Saturation voltage (Vth): 1.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C
For further information, please consult the component datasheet on the manufacturer's official website.
Power Mosfet IR2301SPBF SO-8
Login to see pricesThe IR2301SPBF SO-8 It is a conductive N-type field-effect MOSFET with an integrated driver. The integrated driver allows the MOSFET to be controlled by a low-voltage logic signal. This makes it particularly suitable for applications where a MOSFET needs to be controlled by a microcontroller or other logic device.
Its main specifications are:
Saturation voltage (Vth): 4.5 V
Saturation resistance (Rds(on): 0.008 ohms
Collector current (Id): 100 A
Vds: 60 V
Maximum operating temperature (Tj): 150°C
For further information, please consult the component datasheet on the manufacturer's official website.
