Power Mosfet IRF620P TO-220

The Power Mosfet IRF620P TO-220 It is an N-type semiconductor field-effect transistor capable of handling power applications.

Its main specifications are:

Drain-source breakdown voltage (Vds): 200V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 5.2A
Collector-emitter voltage (Vce): 2.5V
Maximum operating temperature (Tj): 175°C

For more information, please consult the component datasheet on the manufacturer's official website.

MOSFET: The most widespread electronic component

[title] - The MOSFET, short for Metal Oxide Semiconductor Field-Effect Transistor, is a unipolar electronic component that regulates the flow of current in a circuit. It is the most widely used electronic component in the world, present in a wide range of devices, from integrated circuits to mobile devices.

There are two main types of MOSFETs: Depletion MOSFET: the conduction channel is present even in the absence of a voltage at the gate. When a voltage is applied to the gate, the channel narrows, reducing the current flow. Enhancement MOSFET: The conduction channel is absent in the absence of a gate voltage. When a voltage is applied to the gate, the channel is formed, allowing current to flow.

MOSFETs are used in a wide range of applications, including: Digital Integrated Circuits such as AND, OR and NOT gates, Analog Integrated Circuits, Power devices to control the power supply of high-power devices, such as motors and transformers, mobile devices used in the power and communication circuits of mobile devices, such as smartphones and tablets.

MOSFETs are fundamental electronic components that have contributed to the development of a wide range of devices. They are characterized by a number of advantages, including: High efficiency, High speed, Small size. These advantages have made MOSFETs the most widely used electronic components in the world.