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The component ISL9V2040S3ST TO-252 It is a power NPN bipolar junction transistor (BJT), designed for high-power switching applications.
The Technical specifications of the transistor ISL9V2040S3ST TO-252 are as follows:
Type: BJT NPN
Collector-emitter voltage (VCEO): 40V
Collector Current (IC): 20A
Base-collector current gain (hFE): 200
Base-emitter voltage (VBE): 0.7V
Maximum operating temperature: 150°C
9 in stock
[title] - The transistor is an electronic component composed of three terminals (tripole) called base, collector and emitter.
This can be used as a switch or as an amplifier.
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