The 5401GMAA TO-252 component is a NPN type power bipolar junction transistor (BJT). It is a high current, low voltage output transistor, designed for high power switching applications.
The Technical specifications of the transistor 5401GMAA TO-252 are as follows:
Type: BJT NPN
Collector-emitter voltage (VCEO): 120V
Collector Current (IC): 100 A
Base-collector current gain (hFE): 100
Base-emitter voltage (VBE): 0.7V
Maximum operating temperature: 150°
[title] - The transistor is an electronic component composed of three terminals (tripole) called base, collector and emitter.
This can be used as a switch or as an amplifier.
- As a switch, the transistor allows or prevents the flow of current in a circuit.
- As an amplifier, the transistor increases the power of an electrical signal.
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