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Power Mosfet IRF9910 SO-8
The Power Mosfet IRF9910 SO-8 It is an N-type conducting field-effect transistor. This MOSFET is suitable for high-current and high-power applications, such as switching inductive loads. Its main specifications are:
Saturation voltage (Vth): 2.55 V
Saturation resistance (Rds(on): 0.0134 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 20 V
Maximum operating temperature (Tj): 150°C
For further information, please consult the component datasheet on the manufacturer's official website.
