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MOSFET BUK9E06 TO-262
The BUK9E06 TO-262 It is an N-type conducting field-effect MOSFET. Its main specifications are:
Saturation voltage (Vth): 2 V
Saturation resistance (Rds(on): 0.06 ohms
Collector current (Id): 75 A
Collector-emitter voltage (Vce): 55 V
Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads.
For further information, please consult the component datasheet on the manufacturer's official website.
MOSFET IRF2804L TO-262
The IRF2804L TO-262 It is an N-type conducting field-effect MOSFET. Its main specifications are:
Saturation voltage (Vth): 2.5 - 3 V
Saturation resistance (Rds(on): 0.1 ohm
Collector current (Id): 82 A
Collector-emitter voltage (Vce): 75 V
Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads.
For further information, please consult the component datasheet on the manufacturer's official website.
Power Mosfet FDS8858CZ SO-8
The Power MOSFET FDS8858CZ SO-8 It's a dual MOSFET, meaning it has two channels, one N and one P. This makes it suitable for applications requiring the switching of two independent loads. For example, it can be used to control two motors or two LEDs. Its main specifications are:
Saturation voltage (Vth): 1.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C
For further information, please consult the component datasheet on the manufacturer's official website.
