The TPC8125 SOIC-8 Power MOSFET is a P-type conduction field-effect transistor (requires a negative voltage to activate). This MOSFET is suitable for low-voltage applications, such as signal amplification and switching. Its main specifications are:
Saturation voltage (Vth): -2.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C
For further information, please consult the component datasheet on the manufacturer's official website.