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Transistor IRFBC30AS TO-252
Transistor ISL9V2040S3ST TO-252
The component ISL9V2040S3ST TO-252 It is an NPN power bipolar junction transistor (BJT), designed for high-power switching applications. technical specifications of the transistor ISL9V2040S3ST TO-252 are as follows:
Type: BJT NPN
Collector-emitter voltage (VCEO): 40V
Collector Current (IC): 20A
Base-collector current gain (hFE): 200
Base-emitter voltage (VBE): 0.7 V
Maximum operating temperature: 150°C
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