The IRF8513 SO-8 Power MOSFET is an N-type conducting field-effect transistor. This MOSFET is suitable for medium-current applications, such as switching resistive loads. Its main specifications are:
Saturation voltage (Vth): 2.35 V
Saturation resistance (Rds(on): 0.0155 ohms
Collector current (Id): 8 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 175°C
For further information, please consult the component datasheet on the manufacturer's official website.