Power Mosfet STS4NF100 SO-8

The STS4NF100 SO-8 Power Mosfet is an N-type conduction field effect transistor and has a lower collector current of 100A, this makes it more suitable for medium current applications.

Its main specifications are:

Saturation voltage (Vth): 2.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 100 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C

For further information, please consult the component datasheet on the manufacturer's official website.

Power Mosfet TPC8125 SOIC-8

The TPC8125 SOIC-8 Power MOSFET is a P-type conduction field-effect transistor (requires a negative voltage to turn on). This MOSFET is suitable for low-voltage applications, such as signal amplification and switching.

Its main specifications are:

Saturation voltage (Vth): -2.5 V
Saturation resistance (Rds(on): 0.02 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 150°C

For further information, please consult the component datasheet on the manufacturer's official website.