Showing 121–132 of 268 results

Power Mosfet IR2301SPBF SO-8

The IR2301SPBF SO-8 It is a conduction N-type field effect MOSFET with an integrated driver. The integrated driver allows the MOSFET to be controlled by a low voltage logic signal. This makes it particularly suitable for applications where a MOSFET needs to be controlled by a microcontroller or other logic device. Its main specifications are: Saturation voltage (Vth): 4.5V Saturation resistance (Rds(on): 0.008 ohms Collector current (Id): 100 A Vds: 60 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.

Power mosfet IRF1324PBF TO-220

5,80 
Il Power Mosfet IRF1324PBF TO-220 è un transistor a effetto di campo a semiconduttore di tipo N in grado di

Power mosfet IRF3205 TO-220

2,95 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of

Power mosfet IRF3710Z TO-220

3,15 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of

Power MOSFET IRF530N TO-220

2,30 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of

Power Mosfet IRF620P TO-220

2,30 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of

Power Mosfet IRF630 TO-220

3,80 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of

Power Mosfet IRF644 TO-220

4,20 
The IRF9530 TO-220 Power Mosfet is an N-type semiconductor field-effect transistor capable of handling

Power mosfet IRF740A TO-220

5,30 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of

Power Mosfet IRF820APBF TO-220

3,50 
The IRF820APBF TO-220 Power Mosfet is an N-type semiconductor field-effect transistor capable of

Power Mosfet IRF8513 SO-8

The Power Mosfet IRF8513 SO-8 is an N-type conduction field effect transistor. This MOSFET is suitable for medium current applications, such as switching resistive loads. Its main specifications are: Saturation voltage (Vth): 2.35V Saturation resistance (Rds(on): 0.0155 ohm Collector current (Id): 8 A Collector-emitter voltage (Vce): 30 V Maximum operating temperature (Tj): 175°C For more information, please consult the component datasheet on the manufacturer's official website.

Power Mosfet IRF9520P TO-220

2,80 
The Power Mosfet IRF9520P TO-220 is a P-type semiconductor field-effect transistor capable of