The component SPB80N04S2 TO-252 is It is a power NPN bipolar junction transistor (BJT), designed for high-power switching applications.
The Technical specifications of the SPB80N04S2 TO-252 transistor are as follows:
Type: BJT NPN
Collector-emitter voltage (VCEO): 40V
Collector Current (IC): 80A
Base-collector current gain (hFE): 100
Base-emitter voltage (VBE): 0.7V
Maximum operating temperature: 150°C
[title] - The transistor is an electronic component composed of three terminals (tripole) called base, collector and emitter.
This can be used as a switch or as an amplifier.
- As a switch, the transistor allows or prevents the flow of current in a circuit.
- As an amplifier, the transistor increases the power of an electrical signal.
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