The component IPB80N04S TO-252 It is a power NPN bipolar junction transistor (BJT), designed for high-power switching applications.
The Technical specifications of the IPB80N04S TO-252 transistor are as follows:
Type: BJT NPN
Collector-emitter voltage (VCEO): 40 V
Collector Current (IC): 320 A
Base-collector current gain (hFE): 100
Base-emitter voltage (VBE): 0.7V
Maximum operating temperature: 150°C
[title] - The transistor is an electronic component composed of three terminals (tripole) called base, collector and emitter.
This can be used as a switch or as an amplifier.
- As a switch, the transistor allows or prevents the flow of current in a circuit.
- As an amplifier, the transistor increases the power of an electrical signal.
English 
Italian 
Spanish 
French 
Reviews
There are no reviews yet.