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The IRF8513 SO-8 Power Mosfet is an N-type conducting field-effect transistor. This MOSFET is suitable for medium-current applications, such as switching resistive loads.

Its main specifications are:

Saturation voltage (Vth): 2.35 V
Saturation resistance (Rds(on): 0.0155 ohms
Collector current (Id): 8 A
Collector-emitter voltage (Vce): 30 V
Maximum operating temperature (Tj): 175°C

For further information, please consult the component datasheet on the manufacturer's official website.

The Power Mosfet IRF9910 SO-8 It is an N-type conducting field-effect transistor. This MOSFET is suitable for high current and high power applications, such as switching inductive loads.

Its main specifications are:

Saturation voltage (Vth): 2.55 V
Saturation resistance (Rds(on): 0.0134 ohms
Collector current (Id): 10 A
Collector-emitter voltage (Vce): 20 V
Maximum operating temperature (Tj): 150°C

For further information, please consult the component datasheet on the manufacturer's official website.