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Power Mosfet IR2301SPBF SO-8

The IR2301SPBF SO-8 It is a conductive N-type field-effect MOSFET with an integrated driver. The integrated driver allows the MOSFET to be controlled by a low-voltage logic signal. This makes it particularly suitable for applications where a MOSFET needs to be controlled by a microcontroller or other logic device. Its main specifications are: Saturation voltage (Vth): 4.5 V Saturation resistance (Rds(on): 0.008 ohms Collector current (Id): 100 A Vds: 60 V Maximum operating temperature (Tj): 150°C For further information, please consult the component datasheet on the manufacturer's official website.
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Power mosfet IRF1324PBF TO-220

The Power Mosfet IRF1324PBF TO-220 is an N-type semiconductor field-effect transistor capable of
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Power MOSFET IRF3205 TO-220

The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of
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Power MOSFET IRF3710Z TO-220

The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of
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Power MOSFET IRF530N TO-220

The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of
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Power Mosfet IRF620P TO-220

The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of
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Power Mosfet IRF630 TO-220

The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of
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Power Mosfet IRF644 TO-220

The Power Mosfet IRF644 TO-220 is an N-type semiconductor field-effect transistor capable of handling
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Power MOSFET IRF740A TO-220

The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of
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